Substrate processing apparatus

ABSTRACT

Provided is a substrate processing apparatus, including: transportation chamber maintained in an atmospheric environment where a substrate is transported; a vacuum processing chamber connected with the transportation chamber through a load lock chamber; a substrate placing table installed in the vacuum processing chamber and having a body part and a surface part that is attachable to/detachable from the body part; a storage unit installed in the load lock chamber or the transportation chamber and configured to receive the surface part; and a transportation mechanism configured to transport the substrate from the transportation chamber to the vacuum processing chamber through the load lock chamber and transport the surface part between the storage unit and the body part of the vacuum processing chamber.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. patent application Ser. No.13/434,255, filed on Mar. 29, 2012, which claims priority from JapanesePatent Application No. 2011-079859, filed on Mar. 31, 2011, with theJapan Patent Office, and U.S. Provisional Application No. 61/477,639,filed on Apr. 21, 2011, with the United States Patent and TrademarkOffice, the disclosures of which are incorporated herein in theirentireties by reference.

TECHNICAL FIELD

The present disclosure relates to a substrate processing apparatusincluding a vacuum processing chamber, a substrate transportationchamber in an atmospheric pressure environment, and a load lock chamber.

BACKGROUND

In a process of forming a wire structure, there is a case of performingplasma etching to form a damascene-structure concave portion constitutedby a groove or a via hole on various layers formed on, for example, asemiconductor wafer (“wafer”).

A plasma etching apparatus that performs the plasma etching process isconfigured, for example, by placing an upper electrode and a placingtable serving as a lower electrode in a processing chamber under avacuum state. While the wafer is placed in the placing table, plasma isgenerated and ions are injected into the placing table by applying ahigh-frequency power at a predetermined frequency to the upper electrodeand the placing table through a matching unit to thereby perform anetching process. An electrostatic chuck in which the wafer is placed onthe surface thereof and a focus ring surrounding an outer periphery ofthe wafer placed in the electrostatic chuck are installed in the placingtable. The electrostatic chuck serves to control the temperature of thewafer by adsorbing the wafer and transferring heat to the wafer. Thefocus ring is installed to distribute plasma on the surface of the waferwith high uniformity and etched together with the wafer by the ions.

However, the electrostatic chuck and the wafer have different thermalexpansion coefficients, such that when the wafer is placed on theelectrostatic chuck, the electrostatic chuck and the wafer rub againsteach other due to the difference between the thermal expansioncoefficients. As a result, when the processing of the wafer isrepeatedly continued, the surface of the electrostatic chuck isgradually planarized to increase a contact area between the placingtable and the wafer, such that a transfer rate of heat to the wafer ischanged, and as a result, an etching characteristic of the wafer ischanged. Further, when the etching process of the wafer is repeatedlyperformed, the focus ring is also etched, and as a result, the shape ofthe corresponding focus ring is gradually changed. The change in theshape results in changing an injection direction of the ions or aformation state of an electric field, thereby changing the etchingcharacteristic of the wafer.

In order to remove an adherend attached to a wall surface or the placingtable within the processing chamber after etching, cleaning may beperformed, in which a gas supplied into the processing chamber turnedinto plasma to remove the adherend. Protecting the electrostatic chuckby placing a dummy wafer on the electrostatic chuck has been consideredin the cleaning. However, it has been considered that the cleaning isperformed without using the dummy wafer in order to save time or reducethe cost required to transport the dummy wafer into the processingchamber. However, when the dummy wafer is not placed as such, thesurface of the electrostatic chuck may be chamfered by the cleaning,such that the transfer rate of the heat to the wafer is changed, thus,the etching characteristic of the wafer is changed.

As such, the state of the surface of the electrostatic chuck and theshape of the focus ring are changed due to the consumption resultingfrom the etching process, and as a result, the etching characteristic ischanged. Therefore, a precise state management is required. When theshape is out of an allowable range, an action such as an immediatereplacement is needed.

However, since the electrostatic chuck and the focus ring are installedin the vacuum state as described above, installing a sensor in theprocessing chamber is considered in order to check the states of theelectrostatic chuck and the focus ring in the vacuum state. However,plasma may be misaligned due to the installation of the sensor.Therefore, based on a tendency of the change in the state of the surfaceof the electrostatic chuck and the shape of the focus ring in therelated art, usable durations (life-spans) of the electrostatic chuckand the focus ring are set, and when a plasma etching duration exceedsthe set durations, the processing chamber is opened to the atmosphere toreplace the electrostatic chuck and the focus ring. Further, when thechange in etching characteristic in the wafer is verified, theprocessing chamber is opened and the states of the electrostatic chuckand the focus ring are checked. When the shape is out of the allowablerange, the electrostatic chuck and the focus ring may be replaced.

However, since the change degrees in the shapes of the electrostaticchuck and the focus ring are different according to the difference inetching conditions, it is difficult to manage the states of theelectrostatic chuck and the focus ring precisely by using a technique ofsetting the usable durations as described above. In the technique ofverifying the change in etching characteristic of the wafer, andthereafter, replacing the electrostatic chuck and the focus ring, thewafer is wasted. As a result, it is difficult to acquire the stableetching characteristic over a long period. In the technique, since theprocessing chamber is opened to the atmosphere when replacing theelectrostatic chuck and the focus ring, an etching process cannot beaccomplished until a desired vacuum degree is acquired byvacuum-exhausting the processing chamber after the processing chamber isopened to the atmosphere. Therefore, productivity of the plasma etchingapparatus may deteriorate. Japanese Patent Application Laid-Open No.2009-16447 discloses a substrate processing apparatus having the plasmaetching apparatus, but a technique of solving the problem is notdisclosed.

SUMMARY

An exemplary embodiment of the present disclosure provides a substrateprocessing apparatus, including: a transportation chamber maintained inan atmospheric environment where a substrate is transported; a vacuumprocessing chamber connected with the transportation chamber through aload lock chamber to perform a vacuum processing of the substrate; asubstrate placing table installed in the vacuum processing chamber andhaving a body part and a surface part that is attachable to/detachablefrom the body part; a storage unit installed in the load lock chamber orthe transportation chamber and configured to receive the surface part;and a transportation mechanism configured to transport the substratefrom the transportation chamber to the vacuum processing chamber throughthe load lock chamber and transport the surface part between the storageunit and the body part of the vacuum processing chamber.

The foregoing summary is illustrative only and is not intended to be inany way limiting. In addition to the illustrative aspects, embodiments,and features described above, further aspects, embodiments, and featureswill become apparent by reference to the drawings and the followingdetailed description.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a longitudinal side view of a substrate processing apparatusaccording to an exemplary embodiment of the present disclosure.

FIG. 2 is a longitudinal side view of a stocker installed in thesubstrate processing apparatus.

FIG. 3 is a longitudinal front view of an upper part of the stocker.

FIG. 4 is a transverse plan view of the stocker.

FIG. 5 is a perspective view of a placing table installed in thestocker.

FIG. 6 is a longitudinal side view of an alignment module installed inthe substrate processing apparatus.

FIG. 7 is a longitudinal side view of an alignment module installed inthe substrate processing apparatus.

FIG. 8 is a longitudinal side view of a plasma etching module installedin the substrate processing apparatus.

FIG. 9 is a perspective view of a placing table installed in the plasmaetching module.

FIG. 10 is a process diagram illustrating processing performed in thesubstrate processing apparatus.

FIG. 11 is a process diagram illustrating processing performed in thesubstrate processing apparatus.

FIG. 12 is a process diagram illustrating processing performed in thesubstrate processing apparatus.

FIG. 13 is a process diagram illustrating processing performed in thesubstrate processing apparatus.

FIG. 14 is a process diagram illustrating processing performed in thesubstrate processing apparatus.

FIG. 15 is a process diagram illustrating processing performed in thesubstrate processing apparatus.

FIG. 16 is a process diagram illustrating processing performed in thesubstrate processing apparatus.

FIG. 17 is a process diagram illustrating processing performed in thesubstrate processing apparatus.

FIG. 18 is a process diagram illustrating processing performed in thesubstrate processing apparatus.

FIG. 19 is a process diagram illustrating processing performed in thesubstrate processing apparatus.

FIG. 20 is a process diagram illustrating an example of anotherprocessing in a substrate processing apparatus.

FIG. 21 is a process diagram illustrating an example of anotherprocessing in a substrate processing apparatus.

FIG. 22 is a process diagram illustrating an example of anotherprocessing in a substrate processing apparatus.

FIG. 23 is a plan view illustrating a configuration of another substrateprocessing apparatus.

FIG. 24 is a plan view illustrating an example of another transportationmechanism of a substrate processing apparatus.

FIG. 25 is a perspective view illustrating a placing table correspondingto the transportation mechanism.

FIG. 26 is a process diagram illustrating a transportation example inthe transportation mechanism.

FIG. 27 is a longitudinal side view of another placing table installedin the plasma etching module.

FIG. 28 is a plan view of the placing table.

FIG. 29 is a longitudinal side view of the placing table.

FIG. 30 is a plan view of the placing table.

FIG. 31 is a longitudinal side view of yet another placing table.

FIG. 32 is a longitudinal side view of the placing table.

DETAILED DESCRIPTION

In the following detailed description, reference is made to theaccompanying drawing, which form a part hereof. The illustrativeembodiments described in the detailed description, drawing, and claimsare not meant to be limiting. Other embodiments may be utilized, andother changes may be made, without departing from the spirit or scope ofthe subject matter presented here.

The present disclosure has been made in an effort to check a state of asurface part of a substrate placing table installed in a vacuumprocessing chamber or shorten a stop time of vacuum processing byreplacing the corresponding surface part and manage the state of thesurface part precisely.

An exemplary embodiment of the present disclosure provides a substrateprocessing apparatus, including: a transportation chamber maintained ina atmospheric environment where a substrate is transported; a vacuumprocessing chamber connected with the transportation chamber through aload lock chamber to perform vacuum processing of the substrate; asubstrate placing table installed in the vacuum processing chamber andhaving a body part and a surface part that is attachable to/detachablefrom the body part; a storage unit installed in the load lock chamber orthe transportation chamber and configured to receive the surface part;and a transportation mechanism configured to transport the substratefrom the transportation chamber to the vacuum processing chamber throughthe load lock chamber and transport the surface part between the storageunit and the body part of the vacuum processing chamber.

Detailed aspects of the present disclosure are as follows.

-   (1) A vacuum transportation chamber in a vacuum state interposed    between the load lock chamber and the vacuum processing chamber is    installed.-   (2) The storage unit is partitioned from the load lock chamber and    the vacuum processing chamber to be connected to the vacuum    transportation chamber, instead of being installed in the load lock    chamber or the transportation chamber, and the substrate processing    apparatus further includes a gate valve configured to switch    opening/closing of the storage unit with respect to the vacuum    transportation chamber so that the inside of the storage unit is    converted from a vacuum state to an atmospheric environment while    the vacuum transportation chamber is in the vacuum state.-   (3) The surface part has a placement surface where the substrate is    placed, the storage unit has a holding unit for holding the surface    part, and the transportation mechanism transports the substrate from    the storage unit to a vacuum processing chamber while placing the    substrate in the surface part.-   (4) An alignment mechanism aligning the holding unit before    transporting the surface part and the substrate to the holding unit    is installed in order to place the substrate at a predetermined    position of the placement surface.-   (5) The vacuum processing chamber is used to plasma-process the    substrate.-   (6) The surface part includes at least one of an electrostatic chuck    for adsorbing the substrate and a focus ring for surrounding an    outer periphery of the substrate and controlling a state of plasma.-   (7) The storage unit includes a first storage unit and a second    storage unit that are partitioned from each other, and the gate    valve is installed in each of the first storage unit and the second    storage unit and is configured to be opened/closed independently    from each other.

According to exemplary embodiments of the present disclosure, a surfacepart of a substrate placing table installed in a vacuum processingchamber is configured to be attachable to/detachable from a body portionand installed in a load lock chamber or an atmospheric transportationchamber or transported to and from a storage unit connected to a vacuumtransportation chamber. Therefore, since the surface part can bereplaced even though the vacuum processing chamber is not opened to theatmosphere, a halt time of vacuum processing in the vacuum processingchamber can be impeded. Further, a state of the surface part can bechecked with the naked eye or the state of the surface part can bechecked by installing various sensors in the storage unit. Therefore,the state of the surface part can be precisely managed, and furthermore,an etching characteristic of a substrate can be prevented fromdeteriorating.

First Exemplary Embodiment

The configuration of a substrate processing apparatus 1 according to anexemplary embodiment of the present disclosure will be described withreference to a plan view of FIG. 1. Substrate processing apparatus 1includes an atmospheric transportation chamber 11 that carries a wafer Was a substrate for fabricating a semiconductor device into substrateprocessing apparatus 1, load lock chambers 12, 12, a vacuumtransportation chamber 13, and for example, four plasma etching modules4. Atmospheric transportation chamber 11 is connected to vacuumtransportation chamber 13 through load lock chambers 12, 12. Plasmaetching modules 4 are connected to vacuum transportation chamber 13 tobe partitioned from load lock chambers 12, 12.

Atmospheric transportation chamber 11 is configured in an atmosphericenvironment, and a carrier placing table 14 in which a carrier Cstoring, for example, twenty five sheets of wafers W is placed isinstalled on a front surface of atmospheric transportation chamber 11. Agate door GT which is opened/closed together with a cover of carrier Cin connection with carrier C is installed on a front wall of atmospherictransportation chamber 11. A stocker 2 serving as a storage unit isinstalled on one side of atmospheric transportation chamber 1 and analignment chamber 3 configuring an alignment mechanism is installed onthe other side. Stocker 2 and alignment chamber 3 will be describedbelow.

A first transportation mechanism 15 is installed in atmospherictransportation chamber 11, and wafer W and an electrostatic chuck 51 anda focus ring 52 as described below are transferred among carrier C, loadlock chamber 12, alignment chamber 3 and stocker 2. First transportationmechanism 15 includes a base portion 15 a, a multi-link arm 15 b and asupport portion 15 c. A base end of arm 15 b is connected to baseportion 15 a, and a front end of arm 15 b is connected to supportportion 15 c. Base portion 15 a is movable horizontally, and further, isconfigured to be elevatable. Support portion 15 c has a U shape in aplanar view and supports wafer W, electrostatic chuck 51 and focus ring52.

A stage, in which wafer W is placed, and elevatable support pins areinstalled in load lock chamber 12, and wafer W may be transferredbetween first transportation mechanism 15 and a second transportationmechanism 16 as described below by the support pins. A vacuum pump and aleak valve (not shown) are installed in load lock chamber 12 to switchan atmospheric environment and a vacuum environment to each other. Thatis, since the environments of atmospheric transportation chamber 11 andvacuum transportation chamber 13 are maintained as the atmosphericenvironment and the vacuum environment, respectively, atmospheres ofload lock chambers 12, 12 are switched in order to transport wafer Wbetween the transportation chambers.

Vacuum transportation chamber 13 is maintained in the vacuum environmentas described above and has second transportation mechanism 16. Secondtransportation mechanism 16 is configured substantially similar to firsttransportation mechanism 15, but two arms and support portions areinstalled in one base portion. A base portion, arms and support portionsof second transportation mechanism 16 are represented by 16 a, 16 b and16 c, respectively.

G in the figure represents an openable/closable gate valve (partitionvalve) partitioning between the respective chambers and between plasmaetching modules 4 and the vacuum transportation chamber. In general,gate valve G is closed, and is opened when wafer W is transportedbetween the respective chambers and between each module and vacuumtransportation chamber 13.

Next, stocker 2 will be described with reference to a longitudinalcross-sectional view of FIG. 2 and a transverse plan view of FIG. 3.Stocker 2 has a case 21, and an opening portion 22 through which firsttransportation mechanism 15 enters and a shutter 23 that opens/closesopening portion 22 are installed in case 21. Several electrostaticchucks 51 and focus rings 52 constituting placing table 43 of wafer W inplasma etching module 4 are received in case 21. A side wall 21 aconfiguring case 21 and installed at an opposite side to atmospherictransportation chamber 11 is configured to, for example, be transparentfor a user to check the states of electrostatic chuck 51 and focus ring52 with naked eyes. Side wall 21 a is configured to beattachable/detachable and enables electrostatic chuck 51 and focus ring52 in case 21 to be replaced.

Herein, configurations of electrostatic chuck 51 and focus ring 52 willbe described with reference to a perspective view of FIG. 4.Electrostatic chuck 51 serves to place and adsorptively hold wafer W andtransfer heat to wafer W during processing in plasma etching module 4,and has a disk shape. A step portion is formed on the surface thereof,and a center 511 is higher than a periphery 512. A hole 513 penetratedby support pins 27 as described below, and a hole 514 for circulatinggas to a rear surface of wafer W during processing wafer W are formed atcenter 511 in a thickness direction of electrostatic chuck 51. A hole515 penetrated by support pins 28 as described below is provided at theperiphery 512 in the thickness direction. Holes 513, 515 are arrangedthree by three in a peripheral direction of electrostatic chuck 51. Aplurality of holes 514 are installed. Reference numeral 516 in thefigure represents a notch formed toward the inside from an outerperiphery of electrostatic chuck 51.

Focus ring 52 is made of, for example, silicon as in wafer W, serves toprevent the state of plasma from being misaligned at the periphery andthe center of wafer W during processing in plasma etching module 4, andhas a ring shape. A step is formed on the surface of focus ring 52 andan outer periphery 522 is higher than an inner periphery 521. Thematerial of focus ring 52 is not limited to silicon, and may be made of,for example, silicon dioxide (SiO₂) or silicon carbide (SiC). Focus ring52 is configured to be placed on periphery 512 of electrostatic chuck51. Outer periphery 522 of focus ring 52 has a size enough to surroundan outer periphery of wafer W.

Referring back to stocker 2, a rack 24 for stacking and supporting aplurality of electrostatic chucks 51 and focus ring 52 is installed inan upper part of case 21. FIG. 5 is a longitudinal cross-section viewacquired by viewing the upper part of case 21 from opening portion 22 ofcase 21. As shown in FIG. 5, rack 24 is horizontally installed seen fromopening portion 22, and supports edges of electrostatic chuck 51 andfocus ring 52. First transportation mechanism 15 that enters throughopening portion 22 supports rear surfaces of electrostatic chuck 51 andfocus ring 52, and may receive electrostatic chuck 51 and focus ring 52from corresponding rack 24.

A circular holding unit 25 is installed below rack 24 as shown in FIGS.2 to 4. Electrostatic chuck 51 and focus ring 52, and wafer W that istransported from carrier C, are transported to holding unit 25 to beintegrated with each other. The integrated members are transported toplasma etching module 4 by first transportation mechanism 15 and secondtransportation mechanism 16. Three holes 26 a (only two are shown inFIG. 2 for convenience) that are formed in a thickness direction ofholding unit 25 are placed in a circumferential direction of holdingunit 25. Support pins 26 supporting the rear surface of electrostaticchuck 51 are installed in each hole 26 a, and each support pin 26 isconfigured to be elevatable by a driving mechanism 26 b shown in FIG. 2.

Three holes 27 a are placed more inward on holding unit 25 than holes 26a, in the same manner as holes 26 a are placed. Support pins 27 areinstalled in each hole 27 a, and each support pin 27 is configured to beelevatable by a driving mechanism 27 b. As shown in FIG. 4, support pins26 support the rear surface of wafer W through hole 513 of electrostaticchuck 51. Three holes 28 a are placed more outward on holding unit 25than holes 26 a, in the same manner as holes 26 a are placed. Supportpins 28 are installed in each hole 28 a, and each support pin 28 isconfigured to be elevatable by a driving mechanism 28 b. As shown inFIG. 4, support pins 28 support the rear surface of focus ring 52through hole 515 of electrostatic chuck 51.

Referring to FIGS. 6 and 7, the configuration of alignment chamber 3will be described. A horizontal rotation stage 31 where wafer W,electrostatic chuck 51 and focus ring 52 are placed, respectively, isinstalled in alignment chamber 3. Rotation stage 31 vacuum-adsorbs andhorizontally supports wafer W, electrostatic chuck 51 and focus ring 52.FIG. 6 illustrates a state in which electrostatic chuck 51 is placed inrotation stage 31, and FIG. 7 illustrates a state in which focus ring 52is placed in rotation stage 31.

Rotation stage 31 is rotated around a vertical axis while maintaining ahorizontal state by a driving mechanism 32. For example, three (only twoare shown in the figure for convenience) support pins 33 are installedin a circumferential direction of rotation stage 31 below rotation stage31. Support pins 33 are elevated by an elevation mechanism 34 toprotrude on rotation stage 31 through a hole 35 provided in a thicknessdirection of rotation stage 31. Wafer W, electrostatic chuck 51 andfocus ring 52 are transferred between rotation stage 31 and firsttransportation mechanism 15 by support pins 33.

A light transmitting unit 36 is installed in an outer upper part ofrotation stage 31, and a light receiving unit 37 is installedtherebelow. As shown in FIG. 6, while rotation stage 31 whereelectrostatic chuck 51 is placed rotates, light transmitting unit 36transmits light to light receiving unit 37. Based on a change in theamount of light which is not blocked by the periphery of electrostaticchuck 51 but projected to light receiving unit 37, a control unit 100 asdescribed below detects a center position of electrostatic chuck 51 onrotation stage 31 and a direction of a notch 516, and places notch 516in a predetermined direction by rotating rotation stage 31. Control unit100 may detect the center position of wafer W by performing the sameprocessing even with respect to wafer W. Control unit 100 detects acenter position of focus ring 52 by performing the same processing withrespect to focus ring 52 as well.

First transportation mechanism 15 receives each member where the centerposition is detected and the direction is adjusted as described above sothat the detected center position is positioned at a predeterminedposition with respect to support portion 15 c of first transportationmechanism 15. By transferring electrostatic chuck 51 as such, theaforementioned position of each hole and position of each support pin ofholding unit 25 are aligned when the electrostatic chuck is placed inholding unit 25. When electrostatic chuck 51 is transported to plasmaetching module 4, the position of hole 513 in electrostatic chuck 51,the position of an electrode 518 on the bottom of electrostatic chuck 51as described below, and the position of hole 514 for circulating gas maybe aligned with respect to the position of support pins 46 of a bodypart 44, the position of a surface electrode 531, and the position of agas ejection hole 48, respectively, which are described below. That is,when the positions are aligned with respect to support portion 15 c, thepositions are aligned with respect to holding unit 25 and plasma etchingmodule 4 as well. Focus ring 52 and wafer W are also transferred basedon the center position as described above to be accurately placed inelectrostatic chuck 51.

Next, plasma etching module 4 will be described with reference to alongitudinal side view of FIG. 8. Plasma etching module 4 is a magnetrontype reactive ion etching apparatus. Plasma etching module 4 includes anairtight processing chamber 41. In processing chamber 41, an upperelectrode 42 which also serves as a gas shower head for introducingprocessing gas for etching and a placing table 43 which also serves as alower electrode are installed in opposition to each other.

Placing table 43 is constituted by, for example, circular body part 44,and electrostatic chuck 51 and focus ring 52 as described above, andelectrostatic chuck 51 and focus ring 52 are installed on the surface ofbody part 44. Three holes 45 a are formed in body part 44 in a thicknessdirection of body part 44 (only two are shown in FIG. 8 for convenience)and respective holes 45 a are arranged in a circumferential direction ofbody part 44. Support pins 45 are installed in each of holes 45 a, andare configured to be elevatable by a driving mechanism 45 b installedbelow processing chamber 41. By this configuration, as shown in FIG. 9,wafer W, electrostatic chuck 51 and focus ring 52 that are integratedwith holding unit 25 of stocker 2 are transferred between secondtransportation mechanism 16 and body part 44. Thereafter, wafer W,electrostatic chuck 51 and focus ring 52 that are integrated with eachother are referred to as a target transport body 50.

Three holes 46 a are formed in body part 44 in the thickness directionthereof, and holes 46 a are arranged in a circumferential direction ofbody part 44 more inside body part 44 than holes 45 a. Support pins 46are installed in each of holes 46 a, and are configured to be elevatableby an elevation mechanism 46 b installed below processing chamber 41.While electrostatic chuck 51 and focus ring 52 are placed in body part44, wafer W is pushed up by support pins 46 to transfer correspondingwafer W between second transportation mechanism 16 and placing table 43.Reference numeral 47 in FIG. 8 represents a bellows for keepingairtightness in processing chamber 41.

A heater (not shown) is installed in body part 44, and the temperatureof wafer W is controlled by heat of the corresponding heater throughelectrostatic chuck 51. Gas ejection hole 48 connected to a heattransfer gas supplying unit 48 a is installed in body part 44. The heattransfer gas composed of, for example, helium gas, which is ejected fromgas ejection hole 48, is supplied to a minute gap between correspondingelectrostatic chuck 51 and wafer W through hole 514 of electrostaticchuck 51 to perform a heat transfer to wafer W. A high-frequency powersupply unit 49 b applying bias power through matching unit 49 a isconnected to body part 44.

Herein, the configuration of body part 44 will be described whilesupplementing the configuration of electrostatic chuck 51. The surfaceof electrostatic chuck 51 is made of, for example, ceramics, and aplate-shaped main electrode 517 is installed therein. An extractionelectrode 518 is installed downward from main electrode 517. Extractionelectrode 518 is exposed to the bottom of electrostatic chuck 51.Surface electrode 531 is installed at a position of the surface of bodypart 44, which corresponds to extraction electrode 518, and surfaceelectrode 531 is connected to a DC power supply 532. When electrostaticchuck 51 is placed in body part 44, extraction electrode 518 and surfaceelectrode 531 are duplicated with each other and DC voltage is appliedto main electrode 517 from DC power supply 532, such that wafer W iselectrostatically adsorbed onto the surface of electrostatic chuck 51 byelectrostatic force.

Pressing members 534 and 534 that form a pair are installed on the sideof body part 44 with body part 44 interposed therebetween. Electrostaticchuck 51 is held between pressing members 534 to prevent electrostaticchuck 51 from floating by pressure of the aforementioned heat transfergas. Pressing members 534 are formed such that an upper side of astanding plate installed on a side circumference of body part 44 is benttoward body part 44 at 90°. The upper side is shown as a pressing unit535. A support member 536 that extends in a diameter direction ofcorresponding body part 44 to support pressing members 534 is installedon the side circumference of body part 44. Pressing unit 535 is moved inthe diameter direction of body part 44 through support member 536 by adriving mechanism (not shown) installed in body part 44 to press and fixelectrostatic chuck 51 horizontally.

Next, processing chamber 41 will be described. An exhaust pipe 53 isconnected to the bottom of processing chamber 41, such that the insideof processing chamber 41 is vacuum-exhausted by a vacuum pump 54. Atransport opening for transporting target transport body 50 is installedon a side wall of processing chamber 41 and opened/closed by gate valveG as described above. Magnet portions 55 and 55 formed by arranging, forexample, a plurality of permanent magnets in the ring shape arevertically installed on an outer periphery of processing chamber 41 inorder to form a predetermined magnetic field under a processingenvironment.

A plurality of gas ejection openings 56 are formed on the bottom ofupper electrode 42, and is in communication with a buffer chamber 56 awithin upper electrode 42. Various gases supplied to buffer chamber 56 afrom a gas supplying unit 57 are ejected toward wafer W from gasejection openings 56. A high-frequency power supply unit 58 forsupplying high-frequency power through a matching unit 58 a is connectedto upper electrode 42. Reference numeral 41 b in the figure representsan insulating member 41 b, and insulates upper electrode 42 and the sidewall of processing chamber 41 from each other.

Substrate processing apparatus 1 has control unit 100 that controls anoperation of each unit. Control unit 100 includes a computer including,for example, a CPU and a program (not shown). In the program, a step(command) group is organized to transmit a control signal to each unitof substrate processing apparatus 1 in order to perform operations ofsubstrate processing apparatus 1 as described below, such astransportation of wafer W, electrostatic chuck 51 and focus ring 52 byfirst transportation mechanism 15 and second transportation mechanism16, alignment of these members in alignment chamber 3, and etching ofwafer W in each module. This program is stored in storage media such as,for example, a hard disk, a compact disk, a magneto-optical disk and amemory card, and is installed in the computer therefrom.

The aforementioned operation of substrate processing apparatus 1 will bedescribed. First, the inside of vacuum transportation chamber 13 and theinside of processing chamber 41 of each plasma etching module 4 arevacuum-exhausted and maintained to the vacuum state. Firsttransportation mechanism 15 receives electrostatic chuck 51 from rack 24of stocker 2, and transports received electrostatic chuck 51 to rotationstage 31 of alignment chamber 3. As described above, the center ofelectrostatic chuck 51 and the direction of notch 516 are detected,notch 516 faces a predetermined direction, and electrostatic chuck 51 istransferred to support portion 15 c of first transportation mechanism 15so that the detected center is positioned at a predetermined position.

When first transportation mechanism 15 transports electrostatic chuck 51onto holding unit 25 of stocker 2, support pins 26 ascend to support therear surface of electrostatic chuck 51 as shown in FIG. 10. When supportportion 15 c retreats from holding unit 25, support pins 26 descend,such that electrostatic chuck 51 is placed on the surface of holdingunit 25. Continuously, first transportation mechanism 15 receives focusring 52 from rack 24 of stocker 2, and transports received focus ring 52to rotation stage 31 of alignment chamber 3. As described above, thecenter of focus ring 52 is detected and transferred to support portion15 c so that the center is positioned at a predetermined position ofsupport portion 15 c of first transportation mechanism 15.

Continuously, first transportation mechanism 15 transports focus ring 52onto holding unit 25 of stocker 2, and as shown in FIG. 11, support pins28 protrude on electrostatic chuck 51 through hole 515 of electrostaticchuck 51 to support the rear surface of focus ring 52. When supportportion 15 c retreats from holding unit 25, support pins 28 descend,such that focus ring 52 is placed on the surface of periphery 512 ofelectrostatic chuck 51.

Continuously, carrier C is placed in carrier placing table 14 andconnected to atmospheric transportation chamber 11. Next, gate door GTand the cover of carrier C are opened, and wafer W within carrier C iscarried into alignment chamber 3 through atmospheric transportationchamber 11 by first transportation mechanism 15. As described above, thecenter position of wafer W is detected. Wafer W is transferred so thatthe detected center is positioned at a predetermined position of supportportion 15 c of first transportation mechanism 15.

When support portion 15 c of first transportation mechanism 15transports wafer W onto holding unit 25 of stocker 2, support pins 27 ofelectrostatic chuck 51 ascend to support the rear surface of wafer W asshown in FIG. 12. When support portion 15 c retreats from holding unit25, support pins 27 descend, such that wafer W is placed on center 511of electrostatic chuck 51 to form target transport body 50.

Continuously, as shown in FIG. 14, support pins 26 push up a rearsurface of target transport body 50 to transfer target transport body 50to first transportation mechanism 15. First transportation mechanism 15transports target transport body 50 to load lock chamber 12 that ismaintained to the air atmosphere. When the inside of the chamber ischanged to the vacuum state by adjusting the pressure of load lockchamber 12, support portion 16 c of second transportation mechanism 16receives target transport body 50 and transports received targettransport body 50 onto body part 44 of plasma etching module 4 throughvacuum transportation chamber 13. As shown in FIG. 15, support pins 45ascend to support the rear surface of target transport body 50 andthereafter, second transportation mechanism 16 retreats from the insideof plasma etching module 4. Support pins 45 descend, such that targettransport body 50 is placed on body part 44 to form placing table 43.Electrostatic chuck 51 of target transport body 50 is interposed betweenpressing members 534, corresponding electrostatic chuck 51 is fixed tobody part 44 by the pressing force, and wafer W is adsorbed and fixed toelectrostatic chuck 51 by applying voltage to electrostatic chuck 51.

The inside of processing chamber 41 is maintained to a predeterminedvacuum degree and mixed gas composed of processing gas, for example,C₄F₈ gas, CO gas, O₂ gas and Ar gas is supplied from upper electrode 42.A high-frequency power is applied to each of upper electrode 42 andplacing table 43, the supplied processing gas is made into plasma, andthe processing gas is injected into wafer W as indicated by an arrow inFIG. 16 to etch an etched layer, for example, a silicon dioxide (SiO₂)layer on the surface of wafer W.

When etching is performed for a predetermined time, the application ofthe high-frequency power and the supply of the processing gas stop, therear surface of wafer W is pushed up by support pins 47 that protrudesthrough hole 513 of electrostatic chuck 51, and wafer W is transferredto support portion 16 c of second transportation mechanism 16 (FIG. 17).As wafer W is carried into load lock chamber 12 that is maintained tothe vacuum state, the pressure of load lock chamber 12 rises to be inthe air atmosphere. Wafer W is transferred to first transportationmechanism 15, and returned to carrier C.

Subsequent wafer W is extracted from carrier C, and subsequent wafer Wis transported to alignment chamber 3 similar to wafer W transported astarget transport body 50, and is transferred to first transportationmechanism 15 with the center position thereof adjusted. Wafer W istransported to plasma etching module 4 through not stocker 2 but loadlock chamber 12 and vacuum transportation chamber 13 to be etched asdescribed above. After the processing, the processed wafer is returnedto carrier C similar to preceding wafer W.

For example, when a predetermined number of wafers W are processed inplasma etching module 4 and then wafer W is carried out, for example, O₂gas as cleaning gas is supplied from upper electrode 42. Thehigh-frequency power is applied to each of upper electrode 42 andplacing table 43, such that the supplied cleaning gas is made intoplasma to be injected into placing table 43 (FIG. 18). Sedimentdeposited on placing table 43 or an inner wall of processing chamber 41is removed by the plasma, and when plasma is generated for apredetermined time, the application of the high-frequency power and thesupply of the cleaning gas halt. The cleaning is performed, for example,before processing a subsequent lot after processing a predetermined lot.

When, for example, a predetermined number of wafers W are processed,fixation of electrostatic chuck 51 to body part 44 by pressing member534 is released, and support pins 45 push up target transport body 50 asshown in FIG. 19. Target transport body 50 is transferred to atmospherictransportation chamber 12 through vacuum transportation chamber 13 andload lock chamber 12, and placed in holding unit 25 of stocker 2, andthereafter, disassembled into wafer W, electrostatic chuck 51 and focusring 52 in a reverse operation to the operation while being assembled.Wafer W is returned to carrier C, and electrostatic chuck 51 and focusring 52 are returned to rack 24.

Thereafter, new electrostatic chuck 51 and focus ring 52 that are heldin stocker 2 are transported to holding unit 25, and integrated withwafer W which is newly carried into the apparatus to configure targettransport body 50, and transported to plasma etching module 4, such thatthe processing by plasma etching module 4 is restarted. Electrostaticchuck 51 and focus ring 52 in plasma etching module 4 is replaced, forexample, before processing a subsequent lot after processing apredetermined lot as in the cleaning. While the processing is performedby new electrostatic chuck 51 and focus ring 52 as described above, auser verifies shapes of electrostatic chuck 51 and focus ring 52returned to stocker 2 from plasma etching module 4, and replaceselectrostatic chuck 51 and focus ring 52 as necessary.

According to substrate processing apparatus 1, electrostatic chuck 51and focus ring 52 are configured to be attachable to/detachable fromplacing table 43 of plasma etching module 4, and when electrostaticchuck 51 and focus ring 52 are not used, electrostatic chuck 51 andfocus ring 52 are transported to stocker 2 in the atmosphericenvironment. Accordingly, since the inside of processing chamber 41 ofplasma etching module 4 needs not be opened to the atmosphere in orderto verify the surface state of electrostatic chuck 51 and focus ring 52,a throughput of substrate processing apparatus 1 can be prevented fromdeteriorating. Since electrostatic chuck 51 and focus ring 52 arecarried out to the outside of processing chamber 41, the surface statecan be easily verified. As a result, since a replacement time can beprecisely determined by performing a precise shape management,electrostatic chuck 51 and focus ring 52 are prevented from being usedwhile the shapes thereof are out of an allowable level, and as a result,the etching characteristic of wafer W can be prevented fromdeteriorating.

In the above example, wafer W, electrostatic chuck 51 and focus ring 52are individually transported to plasma etching module 4 to be etched.However, as described above, when wafer W, electrostatic chuck 51 andfocus ring 52 are collectively transported as target transport body 50,the number of operation processes of first transportation mechanism 15and second transportation mechanism 16 decreases, and the number oftimes of replacement in the atmosphere of load lock chamber 12 decreasesto thereby improve the throughput.

In the above example, transportation frequencies of electrostatic chuck51 and focus ring 52 may be set to be different from each other. Forexample, a support pins that push up focus ring 52 corresponding tosupport pins 28 of stocker 2, independently from electrostatic chuck 51is installed in placing table 43 of plasma etching module 4. After apredetermined number of wafers W are processed, only focus ring 52 ispushed up while electrostatic chuck 51 is fixed to body part 44 by thesupport pins, and thus, transferred to second transportation mechanism16, such that focus ring 52 is returned to stocker 2. New focus ring 52is transported from stocker 2 to plasma etching module 4, andtransferred to the support pins. After a predetermined number of wafersW are processed, target transport body 50 is carried out from plasmaetching module 4 as described above. As such, since the number ofalignment times in alignment chamber 3 or the operation process fordisassembling target transport body 50 in first transportation mechanism15 may be suppressed by individually setting the transportationfrequencies of electrostatic chuck 51 and focus ring 52, the throughputcan be improved.

In the above example, instead of the configuration in which the insideof stocker 2 may be seen with naked eyes, a sensor for detecting theshapes of electrostatic chuck 51 and focus ring 52 may be installed instocker 2. Since the sensor is installed outside processing chamber 41of plasma etching module 4, the sensor is easily installed withoutinterrupting plasma etching within corresponding processing chamber 41.As the sensor, a sensor using optical interference, atomic force,electron rays, X rays or electromagnetic force may be installed. Acamera is installed within case 21 of stocker 2, and a photographedimage is configured to be displayed on a display unit constitutingcontrol unit 100, and for example, the user may judge the replacementtime on the basis of the image. The camera is also installed outsideprocessing chamber 41, and thus, is easily installed, as in the sensor.

The parts such as electrostatic chuck 5 and focus ring 52 haveappropriate shapes or states according to a processing condition, butelectrostatic chuck 51 and focus ring 52 having a shape or a statespecialized for each processing are received in stocker 2, and wheneverthe processing condition such as gas supplied to processing chamber 41or pressure in the processing chamber is changed, electrostatic chuck 51and focus ring 52 may be selected according to the processing conditionto be transported to plasma etching module 4. Therefore, a betteretching characteristic than that of the related art can be acquired. Indetail, for example, focus rings 52 having outer peripheries 522 ofwhich heights, diameter sizes or materials are different from each otherare stored in the stocker. The position of rack 24 where each focus ring52 is placed, and the processing condition are stored in a memoryconstituting control unit 100 to correspond to each other. When the userdesignates the processing condition with respect to the lot of thewafer, first transportation mechanism 15 receives focus ring 52 of rack24 corresponding to the processing condition to form target transportbody 50 as described above, such that the processing in plasma etchingmodule 4 is performed.

Modified Example of First Exemplary Embodiment

In the above exemplary embodiment, electrostatic chuck 51 and focus ring52 are separated at the time of receiving stocker 2. However,electrostatic chuck 51 and focus ring 52 may be joined to each other inadvance to be integrated as a surface part 61, and surface part 61 maybe stored in rack 24 of stocker 2. Even in this case, surface part 61 isintegrated with wafer W on holding unit 25 in the same manner as above.For example, a notch (not shown) corresponding to notch 516 ofelectrostatic chuck 51 in the first exemplary embodiment is provided onan outer periphery of surface part 61. When surface part 61 istransferred to first transportation mechanism 15 in alignment chamber 3,a direction of surface part 61 is adjusted by the notch.

When surface part 61 (FIG. 20) aligned with respect to support portion15 c of first transportation mechanism 15 is transferred to holding unit25 of stocker 2 through support pins 26 in alignment chamber 3, andthereafter, wafer W is transported to stocker 2 (FIG. 21) to form targettransport body 50 as in the first exemplary embodiment. Target transportbody 50 is transferred to support portion 15 c (FIG. 22), andtransported to plasma etching module 4 as in the first exemplaryembodiment. After the processing in plasma etching module 4, targettransport body 50 is returned to holding unit 25 as in the firstexemplary embodiment. Wafer W is separated from surface part 61 andreturned to carrier C, and surface part 61 is returned to rack 24 ofstocker 2. In the modified example, since the number of operation timesof first transportation mechanism 15 performed to form target transportbody 50, and the number of alignment times of alignment chamber 3 may besmaller than the first exemplary embodiment, a higher throughput can beacquired.

Second Exemplary Embodiment

As the second exemplary embodiment, an example in which stocker 2 isconnected to vacuum transportation chamber 13 is shown in FIG. 23. Twostockers 2 are installed in a substrate processing apparatus 6 of FIG.23. Each stocker 2 is configured similar to the first exemplaryembodiment, but each stocker 2 has gate valve (division valve) G similarto plasma etching module 4 instead of shutter 23. An exhaust hole thatmaintains the vacuum state by vacuum-exhausting the inside ofcorresponding case 21 and an air supply hole that supplies air torestore the inside of case 21 from the vacuum state to the atmosphericenvironment are installed in case 21.

In the second exemplary embodiment, alignment chamber 3 is connected toand installed in vacuum transportation chamber 13. Alignment chamber 3is configured substantially similar to the first exemplary embodiment,but the inside thereof is maintained in the vacuum state. Rotation stage31 is configured to electrostatically adsorb electrostatic chuck 51 orfocus ring 52 instead of vacuum-adsorbing electrostatic chuck 51 orfocus ring 52 to adsorb electrostatic chuck 51 or focus ring 52 in thevacuum state. However, instead of the electrostatic adsorption, positiondisplacement by centrifugal force when rotation stage 31 rotates may beprevented by coating the entirety or a part of the surface of rotationstage 31 with a material having a high friction coefficient such as, forexample, rubber, for each member of focus ring 52, electrostatic chuck51 and wafer W. Instead of installing a mechanism or member forpreventing the position displacement thereof, rotation stage 31 may berotated at a low speed so as to prevent the position displacement by thecentrifugal force.

The processing in the second exemplary embodiment is similar to theprocessing in the first exemplary embodiment except that thetransportation path of electrostatic chuck 51 and focus ring 52 isformed in a sequence of stocker 2, alignment chamber 3 and stocker 2,that wafer W transported from carrier C is transferred to load lockchamber 12, vacuum transportation chamber 13, alignment chamber 3 andstocker 2 in sequence, and that a transportation path of targettransport body 50 formed in stocker 2 is formed in a sequence of vacuumtransportation chamber 13 and plasma etching module 4.

In substrate processing apparatus 6 of the second exemplary embodiment,the shapes of electrostatic chuck 51 and focus ring 52 therein areverified or electrostatic chuck 51 and focus ring 52 are replaced at twostockers 2 that are installed, one at a time. While gate valve G of onestocker 2 is closed to suppress an influence exerted to a vacuum degreeof each of other chambers, vacuum exhaustion within case 21 of thisstocker 2 stops, and at the same time, the atmosphere is supplied tocase 21 to restore the inside of case 21 to the atmospheric environment.The verification of the shapes or the replacement is performed byseparating side wall 21 a of case 21. Thereafter, the inside of case 21is vacuum-exhausted again to be restored to the atmospheric environment.As described above, while electrostatic chuck 51 and focus ring 52 areverified and replaced in one stocker 2, the processing is performedusing electrostatic chuck 51 and focus ring 52 in the other stocker 2.

In the second exemplary embodiment, since electrostatic chuck 51 andfocus ring 52 are carried out from the inside of plasma etching module 4to verify the shapes thereof, the inside of processing chamber 41 ofplasma etching module 4 needs not be opened to the atmosphere similar tothe first exemplary embodiment. Therefore, production efficiency of theapparatus can be prevented from deteriorating. By installing twostockers 2, while one stocker 2 is opened to the atmosphere, formationand transportation of target transport body 50 are continuouslyperformed in the other stocker 2 to thereby prevent the productionefficiency of the apparatus from deteriorating more certainly. However,even a case in which only one stocker 2 is connected to vacuumtransportation chamber 13 is effective because the shape verificationand the replacement can be performed by opening the inside of stocker 2to the atmosphere while the processing is performed in plasma etchingmodule 4.

However, the configurations shown in the respective exemplaryembodiments may be used in combination with each other. For example,even in the second exemplary embodiment, various sensors or cameras maybe installed in stocker 2 and electrostatic chuck 51 and focus ring 52may be integrated and stored in stocker 2. One stocker 2 may beinstalled in atmospheric transportation chamber 11, and further, theother stocker 2 may be installed to be connected to vacuumtransportation chamber 13.

Herein, first transportation mechanism 15 and second transportationmechanism 16 correspond to a transportation mechanism. Thetransportation mechanism may be divided and installed in each chamber totransport each member and move among the respective chambers totransport each member. In regard to the support portion of thetransportation mechanism of each exemplary embodiment, the supportportion transporting target transport body 50 and the support portiontransporting electrostatic chuck 51, focus ring 52 and wafer W may beconfigured to be different from each other. FIG. 24 illustrates anotherconfiguration example of first transportation mechanism 15 in the firstexemplary embodiment and in this example, two multi-link arms 15 b areinstalled in base portion 15 a. Support portion 15 c described above isinstalled at a front end of one arm 15 b, and a support portion 15 d isinstalled at a front end of the other arm 15 b. Support portion 15 d isformed in a rectangular plate shape. Support portion 15 c transportselectrostatic chuck 51, focus ring 52 and wafer W similar to the firstexemplary embodiment. Support portion 15 d transports target transportbody 50.

A transfer mechanism corresponding to support portion 15 d may beinstalled even in holding unit 25 of stocker 2. FIG. 25 illustratesholding unit 25 and two slits 71 that are formed in parallel to eachother are provided on the surface of holding unit 25. Linear members 72and 72 formed along slits 71 are installed to be elevatable and protrudeor are dented on the surface of holding unit 25. As described above,after target transport body 50 is formed in holding unit 25, linearmember 72 ascends to push up target transport body 50 and transfertransported body 50 to support portion 15 d as shown in FIG. 26. Evenwhen target transport body 50 restored from plasma etching module 4 istransferred to holding unit 25, support portion 15 d and linear member72 are used as described above.

Target transport body 50, wafer W, electrostatic chuck 51 and focus ring52 are transported by support portions 15 c and 15 d having differentshapes, respectively, in order to prevent a transported object fromfalling from the support portion by using a support portion having anappropriate shape according to a shape or a weight of the transportedobject. Even in second transportation mechanism 16, one side of twosupport portions 16 c that are installed is configured in the same shapeas support portion 15 d to be configured as a dedicated support portionfor transporting target transport body 50.

In the first exemplary embodiment, vacuum transportation chamber 13 maynot be installed and plasma etching module 4 may be connected directlyto load lock chamber 12. In this case, for example, the transportationmechanism such as first transportation mechanism 15 is installed in loadlock chamber 12 to transfer wafer W between atmospheric transportationchamber 11 and plasma etching module 4. The member stored in stocker 2is not limited to electrostatic chuck 51 and focus ring 52. Although notshown, a protection component is installed in placing table 43 toprevent the outer periphery thereof from being etched. For example, thecorresponding component may be configured to be attachable to/detachablefrom placing table 43 and may be stored in stocker 2. Stocker 2 may beinstalled in load lock chamber 12. A module connected to vacuumtransportation chamber 13 is not limited to the plasma etching moduleand for example, may be a film forming module that forms a film on waferW by making the processing gas into plasma.

Next, another method for fixing electrostatic chuck 51 in plasma etchingmodule 4 will be described. In an example shown in FIGS. 27 and 28, avertical plate 541 is installed in support member 536 of body part 44 ofplasma etching module 4 and a horizontal insertion plate 542 isinstalled in an upper part of vertical plate 541 to extend toward bodypart 44. A groove portion 534 is provided on a side circumference ofelectrostatic chuck 51 to correspond to insertion plate 542. When targettransport body 50 is placed in body part 44, an end portion of insertionplate 542 is inserted into groove portion 543, such that electrostaticchuck 51 is fixed to body part 44 as shown in FIGS. 29 and 30.

FIG. 31 illustrates body part 44 where a concave portion 540 is providedon the surface thereof. A bar 544 that extends downward is installed onthe bottom of electrostatic chuck 51 and when target transport body 50is placed in body part 44, bar 544 is configured to enter concaveportion 540. Pressing members 545 that are opposite to each other withbar 544 interposed therebetween are installed in each concave portion540 and pressing members 545 move toward the center of bar 544 to pressbar 544, such that electrostatic chuck 51 is fixed to body part 44.

From the foregoing, it will be appreciated that various embodiments ofthe present disclosure have been described herein for purposes ofillustration, and that various modifications may be made withoutdeparting from the scope and spirit of the present disclosure.Accordingly, the various embodiments disclosed herein are not intendedto be limiting, with the true scope and spirit being indicated by thefollowing claims.

What is claimed is:
 1. A substrate processing apparatus, comprising: atransportation chamber maintained in an atmospheric environment where asubstrate is transported; a vacuum processing chamber connected with thetransportation chamber through a load lock chamber to perform a vacuumprocessing of the substrate; a substrate placing table installed in thevacuum processing chamber and having a body part and a surface part thatis attachable to/detachable from the body part, the surface partincluding an electrostatic chuck for adsorbing the substrate and a focusring for surrounding an outer periphery of the substrate and controllinga state of plasma; a vacuum transportation chamber installed in a vacuumstate interposed between the load lock chamber and the vacuum processingchamber; a storage unit partitioned from the load lock chamber and thevacuum processing chamber to be connected to the vacuum transportationchamber and configured to receive the surface part, wherein the storageunit includes: a plurality of racks configured to stack and support eachof a plurality of electrostatic chucks and a plurality of focus rings,and a holding unit installed below and spaced apart from the pluralityof racks and configured to hold a target transport body including thesubstrate, the electrostatic chuck, and the focus ring, the holding unitincluding a plurality of holes placed in a circumferential direction ofthe holding unit and a plurality of support pins respectively installedin the plurality of holes, the plurality of support pins selectivelysupporting one of the substrate, the electrostatic chuck, and the focusring, and the plurality of support pins being configured to beelevatable by a driving mechanism; wherein the plurality of holesincludes a plurality of first holes, a plurality of second holes placedmore inward on the holding unit than the plurality of first holes, and aplurality of third holes placed more outward on the holding unit thanthe plurality of first holes, and the plurality of support pins includesa plurality of first support pins installed in the plurality of firstholes respectively and configured to support a rear surface of theelectrostatic chuck, a plurality of second support pins installed in theplurality of second holes respectively and configured to support a rearsurface of the substrate, and a plurality of third support pinsinstalled in the plurality of third holes respectively and configured tosupport a rear surface of the focus ring; a gate valve configured toswitch opening/closing of the storage unit with respect to the vacuumtransportation chamber so that the inside of the storage unit isconverted from a vacuum state to an atmospheric environment while thevacuum transportation chamber is in the vacuum state; an alignmentmechanism configured to align the electrostatic chuck and the focus ringbefore transporting the electrostatic chuck and the focus ring to theholding unit in order to place the focus ring at a predeterminedposition of the electrostatic chuck; and a transportation mechanismconfigured to transport the substrate from the transportation chamber tothe vacuum processing chamber through the load lock chamber, transportthe surface part between the holding unit of the storage unit and thebody part of the vacuum processing chamber, and transport theelectrostatic chuck and the focus ring between the holding unit of thestorage unit and the alignment mechanism.
 2. The substrate processingapparatus of claim 1, wherein the storage unit comprises a first storageunit and a second storage unit that are partitioned from each other. 3.The substrate processing apparatus of claim 2, wherein the gate valvecomprises a first gate valve and a second gate valve installed in thefirst storage unit and the second storage unit, respectively, and areconfigured to be opened/closed independently from each other.